GaP


  • Crystal qauv:Zinc Blende
  • Pawg ntawm symmetry:Td2-F43m
  • Tus naj npawb ntawm atoms hauv 1 cm3:4.94; 1022
  • Auger recombination coefficient:10-30 cm6/s
  • Debye kub:445k ua
  • Product Detail

    Technical Parameters

    Gallium phosphide (GaP) siv lead ua yog ib qho khoom siv kho qhov muag infrared nrog zoo hardness, siab thermal conductivity thiab dav band kis tau tus mob.Vim nws qhov zoo tshaj plaws kho qhov muag, txhua yam thiab thermal zog, GaP muaju tuaj yeem siv rau hauv tub rog thiab lwm yam kev lag luam high-tech teb.

    Cov cuab yeej yooj yim

    Crystal qauv Zinc Blende
    Pawg ntawm symmetry Td2- F43m
    Tus naj npawb ntawm atoms hauv 1 cm3 4.94; 1022
    Auger recombination coefficient 10-30cm6/s
    Debye kub 445k ua
    Qhov ntom 4.14 g ttk-3
    Dielectric tsis tu ncua (static) 11.1
    Dielectric tsis tu ncua (siab zaus) 9.11 ib
    Siv tau electron lojml 1.12mo
    Siv tau electron lojmt 0.22mo
    Qhov zoo ntawm qhov lojmh 0.79mo
    Qhov zoo ntawm qhov lojmlp 0.14 ibmo
    Electron kev sib raug zoo 3.8 e vv
    Lattice tas li 5.4505 A
    Optical phonon zog 0.051 ib

     

    Technical parameters

    Thickness ntawm txhua feem 0.002 thiab 3 +/- 10% mm
    Kev taw qhia 110—110 ib
    Nto zoo scr-dig 40-20 — 40-20 ib
    Flatness yoj ntawm 633nm - 1
    Parallelism arc min <3