Gallium phosphide (GaP) siv lead ua yog ib qho khoom siv kho qhov muag infrared nrog zoo hardness, siab thermal conductivity thiab dav band kis tau tus mob.Vim nws qhov zoo tshaj plaws kho qhov muag, txhua yam thiab thermal zog, GaP muaju tuaj yeem siv rau hauv tub rog thiab lwm yam kev lag luam high-tech teb.
Cov cuab yeej yooj yim | |
Crystal qauv | Zinc Blende |
Pawg ntawm symmetry | Td2- F43m |
Tus naj npawb ntawm atoms hauv 1 cm3 | 4.94; 1022 |
Auger recombination coefficient | 10-30cm6/s |
Debye kub | 445k ua |
Qhov ntom | 4.14 g ttk-3 |
Dielectric tsis tu ncua (static) | 11.1 |
Dielectric tsis tu ncua (siab zaus) | 9.11 ib |
Siv tau electron lojml | 1.12mo |
Siv tau electron lojmt | 0.22mo |
Qhov zoo ntawm qhov lojmh | 0.79mo |
Qhov zoo ntawm qhov lojmlp | 0.14 ibmo |
Electron kev sib raug zoo | 3.8 e vv |
Lattice tas li | 5.4505 A |
Optical phonon zog | 0.051 ib |
Technical parameters | |
Thickness ntawm txhua feem | 0.002 thiab 3 +/- 10% mm |
Kev taw qhia | 110—110 ib |
Nto zoo | scr-dig 40-20 — 40-20 ib |
Flatness | yoj ntawm 633nm - 1 |
Parallelism | arc min <3 |