Cr4 +: YAG Crystals

Cr4+:YAG yog ib qho khoom siv zoo tshaj plaws rau passive Q-hloov ntawm Nd: YAG thiab lwm yam Nd thiab Yb doped lasers nyob rau hauv lub wavelength ntau ntawm 0.8 mus rau 1.2um.


  • Khoom npe:Nc4+:Y3Al5O12
  • Crystal Structure:Kub
  • Dopant Qib:0.5mol-3mol% yog '
  • Moh Hardness:8.5
  • Refractive Index:1.82 @ 1064 nm
  • Kev taw qhia: <100>hauv 5° lossis hauv 5°
  • Initial absorption coefficient:Initial absorption coefficient
  • Initial transmittance:3% ~ 98%
  • Product Detail

    Technical parameters

    Daim ntawv xeem

    Cr4 +: YAG yog cov khoom siv zoo tshaj plaws rau kev ua haujlwm Q-hloov ntawm Nd: YAG thiab lwm yam Nd thiab Yb doped lasers nyob rau hauv lub wavelength ntau ntawm 0.8 mus rau 1.2um.
    Qhov zoo ntawm Cr4+: YAG
    • Muaj tshuaj lom neeg ruaj khov thiab kev ntseeg tau
    • Ua haujlwm yooj yim
    • Kev puas tsuaj siab (> 500MW / cm2)
    • Raws li lub zog siab, lub xeev muaj zog thiab compact passive Q-Switch
    • Lub neej ntev thiab thermal conductivity zoo
    Basic Properties:
    • Cr 4+ :YAG tau pom tias qhov dav pulse ntawm passively Q-hloov lasers yuav luv li 5ns rau diode pumped Nd:YAG lasers thiab repetition siab li 10kHz rau diode pumped Nd:YVO4 lasers.Tsis tas li ntawd, ib qho txiaj ntsig ntsuab tso tawm @ 532nm, thiab UV tso zis @ 355nm thiab 266nm tau tsim, tom qab tom qab SHG intracavity hauv KTP lossis LBO, THG thiab 4HG hauv LBO thiab BBO rau diode pumped thiab passive Q-hloov Nd: YAG thiab Nd: YVO4 lasers.
    • Cr 4+ :YAG kuj yog ib tug laser siv lead ua nrog tunable tso zis los ntawm 1.35 µm mus rau 1.55 µm.Nws tuaj yeem tsim ultrashort pulse laser (rau fs pulse) thaum pumped los ntawm Nd:YAG laser ntawm 1.064 µm.

    Loj: 3 ~ 20mm, H × W: 3 × 3 ~ 20 × 20mm Raws li kev thov ntawm cov neeg siv khoom
    Dimensional tolerances: Txoj kab uas hla Txoj kab uas hla: ± 0.05mm, ntev: ± 0.5mm
    Barrel tiav Hauv av tiav 400 #Gmt
    Parallelism ≤ 20 ″
    Perpendicularity ≤ 15 ′
    Flatness <λ/10
    Nto Zoo 20/10 (MIL-O-13830A) UA
    Lub wavelength 950nm ~ 1100nm
    AR Txheej Reflectivity ≤ 0.2% (@1064nm)
    Kev puas tsuaj pib ≥ 500MW / cm2 10ns 1Hz ntawm 1064nm
    Chamfer <0.1 hli @ 45°

    ZnGeP201